P-channel enhancement mode avalanche rated standard power MOSFET suitable for use in high-side switches, push pull amplifiers, DC choppers, automatic test equipment applications.
- Low RDS(ON) HDMOS� process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance (< 5nH)- easy to drive and to protect
- Easy to mount with 1 screw (isolated mounting screw hole)
- Space savings
- High power density
Other details
| Brand |
LITTELFUSE |
| Part Number |
IXTH50P10 |
| Quantity |
Each |
| Technical Data Sheet EN |
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| Product Change Notice EN |
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