| ₹ 409.15 includes GST and import duties. | |
| B2B customers can avail ₹ 62.4 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The IPP111N15N3 G is an OptiMOS� N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS� part.
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated 2
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Normal level
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Power Management, Motor Drive & Control, Automotive, Communications & Networking, Audio
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.Other details
| Brand | INFINEON |
| Part Number | IPP111N15N3GXKSA1 |
| Quantity | Each |
| Technical Data Sheet EN |  |
| Application Note EN | |
| Simulation Model EN | |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 400.97 |
| 3-5 | ₹ 396.88 |
| 5-10 | ₹ 388.69 |
| 10+ | ₹ 380.51 |
Bulk discount will be automatically applied during checkout based on quantity.