Product details
Technical Specifications
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
40A
Drain Source On State Resistance P Channel
0.0027ohm
Power Dissipation P Channel
46.2W
Product Range
TrenchFET Gen IV Series
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id N Channel
40A
Drain Source On State Resistance N Channel
0.0027ohm
Transistor Case Style
PowerPAK SO
Power Dissipation N Channel
46.2W
Operating Temperature Max
150°C
Other details
Brand |
VISHAY |
Part Number |
SIRB40DP-T1-GE3 |
Quantity |
Each (Supplied on Cut Tape) |
Technical Data Sheet EN |
 |
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