Product Overview
- Single N-Channel Power MOSFET
- Small footprint for compact design
- Low RDS(on) to minimize conduction losses
- Low Qg and capacitance to minimize driver losses
- AEC-Q101 qualified and PPAP capable
- Enhanced optical inspection
- Applications are switching power supplies, power switches and 48V systems
- Motor control, DC/DC converter, load switch are end products
Product details
Technical Specifications
Continuous Drain Current Id
157A
Transistor Case Style
DFN
Operating Temperature Max
175°C
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0028ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Other details
| Brand |
ONSEMI |
| Part Number |
NVMFS6H801NT1G |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
 |
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