INFINEON 1EDI3051ASXUMA1 Gate Driver, EiceDRIVER, 1 Channels, Isolated, High Side, IGBT, SiC MOSFET, 36 Pins, SOIC 1EDI3051AS, SP005423684

1EDI3051ASXUMA1 is a EiceDRIVER� gate driver. It is a high-voltage IGBT/SiC driver designed for automotive motor drives above 50kW. This device is based on infineon�s coreless transformer (CT) technology, providing galvanic insulation between low-voltage and high-voltage domains. This device has been designed to support 600V, 750V and 1200V IGBT/SiC-MOSFET technologies. This device is connected to a 5V logic on the low voltage (primary) side. On the high voltage (secondary) side, the device is dimensioned to drive IGBTs/SiC-MOSFETs directly. Short propagation delays and controlled internal tolerances lead to a minimal distortion of the PWM signal. This device features an output stage of a minimum 20A peak current. In addition, there is a dual Miller clamping stage with typically 5A integrated, and on top it also supports an external clamp transistor drive. It is used in applications such as traction inverters for HEV and EV, high power DC/DC converter.

• Single channel isolated IGBT/SiC driver using coreless transformer technology
• For IGBTs/SiC-MOSFETs up to 1200V, integrated SPI, CMTI up to 150V/ns up to 1000V
• 8kV basic insulation according to DIN EN IEC 60747-17 (VDE 0884-17):2021-10
• Integrated booster with up to 20A peak current rail-to-rail split output
• Basic insulation according to UL 1577, integrated flyback controller
• Dual monitoring/clamping for parallel power device driving
• Safety inputs for primary ASC trigger and PWM control
• Internal and external active miller clamp supports unipolar switching
• Integrated dual ADC for temperature or DC-link voltage measurement
• Operating temperature range from -40°C to 150°C, PG-DSO-36 package