RMLV0408E series 4Mb advanced LPSRAM (512-kword � 8bit). It is a family of 4-Mbit static RAMs organized 524,288-word � 8bit, fabricated by Renesas's high-performance Advanced LPSRAM technologies. This has realized higher density, higher performance, and low power consumption. It offers low power standby power dissipation, therefore, it is suitable for battery backup systems.
- Maximum access time is 45ns, typical current consumption standby is 0.3µA
- Equal access and cycle times, common data input and output three state output
- Directly TTL compatible all inputs and outputs, battery backup operation
- Supply voltage range from 2.7 to 3.6V, input high voltage is 2.2V (min)
- Input leakage current is 1µA (max, Vin = VSS to VCC)
- Operating current is 10mA (max, CS# =VIL, others = VIH/VIL, II/O = 0mA)
- Standby current is 0.3mA (max, CS2 = VIL, others = VSS to VCC)
- Input capacitance is 8pF (max, Vin =0V, Vcc = 2.7 to 3.6V, f = 1MHz, Ta = -40 to +85°C)
- Read cycle time is 45ns (minimum)
- 32-pin plastic TSOP package, temperature range from -40 to +85°C
Product details
| SRAM Type:
Asynchronous SRAM, LPSRAM
|
| Memory Density:
4Mbit
|
| Memory Configuration:
512Kword x 8bit
|
| IC Case / Package:
STSOP
|
| No. of Pins:
32Pins
|
| Supply Voltage Min:
2.7V
|
| Supply Voltage Max:
3.6V
|
| Supply Voltage Nom:
3V
|
| Clock Frequency Max:
-
|
| IC Mounting:
Surface Mount
|
| Operating Temperature Min:
-40°C
|
| Operating Temperature Max:
85°C
|
| Product Range:
-
|
| MSL:
MSL 3 - 168 hours
|
Other details
| Brand |
RENESAS |
| Part Number |
RMLV0408EGSA-4S2#KA1 |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
 |
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