| ₹ 8397.22 includes GST and import duties. | |
| B2B customers can avail ₹ 1280.58 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
Product Overview
MT53E768M64D4HJ-046 WT:C is a mobile LPDDR4 SDRAM. The 12Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 1 channel ×16 I/O, having 8-banks.
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL=16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
- Selectable output drive strength (DS), clock-stop capability
- Programmable VSS (ODT) termination, single-ended CK and DQS support
- Operating voltage is 1.10V VDD2/0.60V VDDQ or 1.10V VDDQ, 468ps cycle time
- 6GB (48Gb) total density, 4266Mb/s data rate per pin
- Operating temperature range from -25°C to +85°C, 556-ball TFBGA package
Product details
Other details
| Brand | MICRON |
| Part Number | MT53E768M64D4HJ-046 WT:C |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 8229.28 |
| 3-5 | ₹ 8145.3 |
| 5-10 | ₹ 7977.36 |
| 10+ | ₹ 7809.41 |
Bulk discount will be automatically applied during checkout based on quantity.