INFINEON S29GL01GT11TFIV20 Flash Memory, Parallel NOR, 1 Gbit, 128M x 8bit, Parallel, 110ns, TSOP-56

S29GL01GT11TFIV20 is a MIRRORBIT� flash memory fabricated on 45-nm process technology. This device offers a fast page access time as fast as 15ns, with a corresponding random access time as fast as 100ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today�s embedded applications requiring higher density, better performance, and lower power consumption.

• 56-TSOP package type
• Single supply (VCC) for read / program / erase (2.7V to 3.6V)
• Versatile I/O feature, wide I/O voltage range (VIO) 1.65V to VCC
• ×8/×16 data bus, asynchronous 32byte page read, four lockable regions (SSR0�SSR3)
• Single word and multiple program on same word options, SSR0 is factory locked
• Automatic error checking and correction internal hardware ECC with single bit error correction
• Sector erase, uniform 128KB sectors, SSR3 is password read protect
• Suspend and resume commands for program and erase operations
• Status register, data polling and ready/busy pin methods to determine device status
• Volatile and non-volatile protection methods for each sector