INFINEON CY15B102QN-50PZXI Ferroelectric RAM (FRAM), 2 Mbit, 256K x 8bit, SPI, 50 MHz, 1.8 V to 3.6 V Supply, DIP-8

CY15B102QN-50PZXI is a 2Mb EXCELON� LP Ferroelectric RAM (F-RAM). It is a low-power, 2Mb non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories. This capability makes the CY15X102QN ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss.

• 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8
• 151-year data retention, Infineon instant non-volatile write technology
• Advanced high-reliability ferroelectric process, supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection scheme, hardware protection using the write protect (active low WP)
• Software protection using write disable (WRDI) instruction
• Device ID contains manufacturer ID and product ID, unique ID, serial number
• Dedicated special sector write and read
• Stored content can survive up to three standard reflow soldering cycles
• Low-voltage operation range from 1.8V to 3.6V
• 8-pin PDIP package, industrial temperature range from -40°C to +85°C