INFINEON CY14B104NA-BA25XI Non-volatile SRAM, 4 Mbit, 256K x 16bit, 25 ns Read/Write, Parallel, 2.7 V to 3.6 V, FBGA-48 SP005640697, CY14B104NA-BA25XI

CY14B104NA-BA25XI is a 4-Mbit (512K × 8/256K × 16) nvSRAM. It is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile element incorporates QuantumTrap technology, producing the world�s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile element (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory.

• 25ns speed, 48-ball FBGA package, industrial ambient temperature range from -40 to +85°C
• 20ns, 25ns, and 45ns access times, internally organized as 256K × 16
• Hands off automatic STORE on power-down with only a small capacitor
• RECALL to SRAM initiated by software or power-up, infinite read, write, and recall cycles
• 1 million STORE cycles to QuantumTrap, 20 year data retention
• Single 3V +20%, -10% operation