ALLIANCE MEMORY AS7C4096A-12JIN SRAM, Asynchronous, 4 Mbit, 512K x 8bit, SOJ, 36 Pins, 4.5 V

AS7C4096A-12JIN is a 5.0V 4Mb (512K × 8) CMOS fast SRAM. It is a high-performance CMOS 4,194,304-bit static random access memory (SRAM) device organized as 524,288 words × 8bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. The chip enable input active-low CE permits easy memory expansion with multiple-bank memory systems. When active-low CE is high the device enters standby mode. The device is guaranteed not to exceed 55mW power consumption in CMOS standby mode. All chip inputs and outputs are TTL-compatible, and operation is from a single 5.0V supply voltage.

• Center power and ground pins
• Low power consumption: 880mW/max at 10ns (active), 55mW/max CMOS (standby)
• Equal access and cycle times
• Easy memory expansion with active-low CE, active-low OE inputs
• TTL-compatible, three-state I/O
• JEDEC standard packages
• ESD protection is ? 2000volts
• Latch-up current is ? 200mA
• 12ns access time, SOJ package
• Industrial temperature range from -40°C to 85°C