| ₹ 558.89 includes GST and import duties. | |
| B2B customers can avail ₹ 85.23 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The MJE5852G is a -400V PNP silicon Bipolar Power Transistor designed for high voltage, high speed and power switching in inductive circuits where fall time is critical. This switch-mode series transistor is particularly suited for line operated switch-mode applications.
- Fast turn-off times
- Complementary to the MJE13007 series
- 6V Emitter to base voltage (VEBO)
- 16ADC Peak collector current
- 4ADC Base current (IB)
- 1.25°C/W Thermal resistance, junction to case
Applications
Industrial, Power Management
Product details
| Power Dissipation Pd | 80W |
| DC Collector Current | 8A |
| Collector Emitter Voltage V(br)ceo | 400V |
| Transition Frequency ft | - |
| Operating Temperature Max | 150°C |
| Transistor Polarity | PNP |
| DC Current Gain hFE | 15hFE |
| No. of Pins | 3Pins |
| Product Range | MJxxxx Series |
| Automotive Qualification Standard | - |
| Transistor Case Style | TO-220AB |
| MSL | - |
Other details
| Brand | ON SEMICONDUCTOR |
| Part Number | MJE5852G |
| Quantity | Each |
| Technical Data Sheet EN |  |
| Product Change Notice EN | |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 547.71 |
| 3-5 | ₹ 542.12 |
| 5-10 | ₹ 530.95 |
| 10+ | ₹ 519.77 |
Bulk discount will be automatically applied during checkout based on quantity.