INFINEON S29GL01GS12DHVV10 Flash Memory, Parallel NOR, 1 Gbit, 128M x 8bit, Parallel, 120ns, FBGA-64

S29GL01GS12DHVV10 is a MIRRORBIT� eclipse flash memory fabricated on 65-nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today�s embedded applications that require higher density, better performance and lower power consumption.

• 120ns random access time speed
• Fortified ball-grid array package (LAE064) 9 mm x 9mm package type
• Industrial plus temperature range from �40°C to +105°C
• VIO = 1.65V to VCC, VCC = 2.7V to 3.6V, highest address sector protected
• ×16 data bus, asynchronous 32byte page read
• Programming in page multiples, up to a maximum of 512bytes
• Automatic error checking and correction internal hardware ECC with single bit error correction
• Sector erase, uniform 128kbyte sectors
• Suspend and resume commands for program and erase operations
• 100000 program / erase cycles, 20 years data retention