| ₹ 130.78 includes GST and import duties. | |
| B2B customers can avail ₹ 19.94 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
Product Overview
SiA975DJ-T1-GE3 is a dual P-channel 12V (D-S) MOSFET. The applications include a load switch, PA switch, and battery switch for portable devices and game consoles.
- TrenchFET® power MOSFET, 100 % Rg tested
- New thermally enhanced PowerPAK® SC-70 package, small footprint area, low on-resistance
- Drain-source breakdown voltage is -12V min (VGS = 0V, ID = -250?A, TJ = 25°C)
- Gate-source threshold voltage range from -0.4 to -1V (VDS = VGS, ID = -250?A, TJ = 25°C)
- Continuous drain current is -4.5A (TJ = 150°C, TC = 25°C)
- Pulsed drain current is -15A (TA = 25°C)
- Continuous source-drain diode current is -4.5A max (TC = 25°C)
- Maximum power dissipation is 7.8W (TC = 25°C)
- Input capacitance is 1500pF typ (VDS = -6V, VGS = 0V, f = 1MHz, TC = 25°C)
- PowerPAK SC-70 package, operating junction temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
Other details
| Brand | VISHAY |
| Part Number | SIA975DJ-T1-GE3 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 128.16 |
| 3-5 | ₹ 126.86 |
| 5-10 | ₹ 124.24 |
| 10+ | ₹ 121.63 |
Bulk discount will be automatically applied during checkout based on quantity.