| ₹ 241.29 includes GST and import duties. | |
| B2B customers can avail ₹ 36.8 ITC on this product | |
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Description
Product Overview
TBD62783AFWG(Z,EHZ is a TBD62783A series BiCD silicon monolithic integrated circuit. It has a clamp diode for switching inductive loads built-in in each output.
- 8 channel source type DMOS transistor array
- High voltage is 50V (max, Ta = 25°C), high current is -500mA (max, for each channel, Ta = 25°C)
- Input voltage range from 2 to 25V (output on, IOUT = -100mA or upper, VDS=2V, Ta = ?40 to 85°C)
- Clamp diode forward current is 400mA (max, Ta = -40 to 85°C)
- Output leakage current is 1.0?A (max, VCC = 50V, VIN = 0V, Ta = 85°C)
- Clamp diode reverse current is 1.0?A (max, VR = 50V, Ta = 85°C)
- Turn on delay is 0.4?s (max, VCC = 50V, RL = 125ohm, CL = 15pF)
- Turn off delay is 2.0?s (max, VCC = 50V, RL = 125ohm, CL = 15pF)
- P-SOP18-0812-1.27-001 package, operating temperature range from -40 to 85°C
Notes
Please be careful about thermal conditions during use.
Product details
Other details
| Brand | TOSHIBA |
| Part Number | TBD62783AFWG(Z,EHZ |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 236.46 |
| 3-5 | ₹ 234.05 |
| 5-10 | ₹ 229.23 |
| 10+ | ₹ 224.4 |
Bulk discount will be automatically applied during checkout based on quantity.