| ₹ 75.96 includes GST and import duties. | |
| B2B customers can avail ₹ 11.58 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The SI2309CDS-T1-GE3 is a P-Channel 60V Power MOSFET with ±20V gate source voltage. It works on TrenchFET® power MOSFET technology.
- Halogen-free
Applications
Audio, Signal Processing
Product details
| Channel Type: P Channel |
| Drain Source Voltage Vds: 60V |
| Continuous Drain Current Id: 1.6A |
| Drain Source On State Resistance: 0.285ohm |
| Transistor Case Style: SOT-23 |
| Transistor Mounting: Surface Mount |
| Rds(on) Test Voltage: 10V |
| Gate Source Threshold Voltage Max: 1V |
| Power Dissipation: 1.7W |
| No. of Pins: 3Pins |
| Operating Temperature Max: 150°C |
| Product Range: - |
| Qualification: - |
| MSL: - |
Other details
| Brand | VISHAY |
| Part Number | SI2309CDS-T1-GE3 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 74.44 |
| 3-5 | ₹ 73.68 |
| 5-10 | ₹ 72.16 |
| 10+ | ₹ 70.64 |
Bulk discount will be automatically applied during checkout based on quantity.