M3032316 is a high performance parallel interface non-volatile MRAM with 32Mbit density. It features SRAM compatible read and write access times of 35ns or 45ns. It operates from -40° to +85°C (industrial version) and -40°C to +105°C (industrial plus version). The device is offered in 48-ball FBGA package. It is a magneto-resistive random-access memory (MRAM). MRAM technology is analogous to flash technology with SRAM compatible 35ns/35ns and 45ns/45ns read/write timings (Persistent SRAM, P-SRAM). Data is always non-volatile. This makes MRAM a very reliable and fast non-volatile memory solution. MRAM is a true random-access memory, allowing both reads and writes to occur randomly in memory. It offers low latency, low power, virtually unlimited endurance and data retention, high performance and scalable memory technology. Also used in factory automation, multifunction printers, industrial control and monitoring, medical diagnostics, smart meter, data switches and routers.
- Utilizing advanced 40nm pMTJ STT-MRAM technology
- Parallel asynchronous x16 interface
- 32Mb density
- Low active write and read current
- Operating voltage of 2.7V to 3.6V
- Ideal for applications that must store and retrieve data without incurring large latency penalties
- Ideal for applications that must store and retrieve data without incurring large latency penalties
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Other details
| Brand |
RENESAS |
| Part Number |
M3032316045NX0IBCY |
| Quantity |
Each |
| Technical Data Sheet EN |
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