NCP51560 is a high current dual isolated MOS gate driver. This is designed for fast switching to drive power MOSFETs and SiC MOSFET power switches. The NCP51560 offers short and matched propagation delays. Two independent and 5kVRMS (UL1577 rating) galvanically isolated gate driver channels can be used in any possible configurations of two low side, two high-side switches or a half-bridge driver with programmable dead time. The NCP51560 offers other important protection functions such as independent under-voltage lockout for both gate drivers. Typical applications are isolated converters in DC-DC and AC-DC power supply, server and telecom power supply, industrial drives, high power DC/DC converters, data servers and telecom power bricks, UPS, motor drives.
- 5V UVLO, provide safety and protection in applications requiring high isolation level
- 4.5A peak source, 9A peak sink output current capability
- Propagation delay typical 36ns with 8ns max delay matching per channel
- Industrial pin to pin compatibility, common mode transient immunity CMTI >200V/ns
- 5kVRMS galvanic isolation from input to each output and 1200V peak differential voltage
- User programmable dead-time, industrial pin to pin compatibility, SOIC-16 WB package
- Improve efficiency and allow direct drive of high power switches
- Offer proper protections for both MOSFET's and SiC FET
- Very good signal integrity and fit with fast switching speed applications
- Improved robustness in fast slew rate high voltage and high current switching applications
Other details
| Brand |
ONSEMI |
| Part Number |
NCP51560ABDWR2G |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
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