The FDS8817NZ is a N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for load switching applications common in portable battery packs.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- 3.8kV typical HBM ESD protection level
Other details
| Brand |
ONSEMI |
| Part Number |
FDS8817NZ |
| Quantity |
Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |
 |
| Technical Data Sheet EN |
|
| Product Change Notice EN |
|
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
