₹ 120.79 includes GST and import duties. | |
B2B customers can avail ₹ 18.42 ITC on this product | |
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Description
The FDS6612A is a single N-channel Logic Level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Fast switching speed
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
Channel Type: N Channel |
Drain Source Voltage Vds: 30V |
Continuous Drain Current Id: 8.4A |
Drain Source On State Resistance: 0.019ohm |
Transistor Case Style: SOIC |
Transistor Mounting: Surface Mount |
Rds(on) Test Voltage: 10V |
Gate Source Threshold Voltage Max: 1.9V |
Power Dissipation: 2.5W |
No. of Pins: 8Pins |
Operating Temperature Max: 150°C |
Product Range: - |
Qualification: - |
MSL: MSL 1 - Unlimited |
Other details
Brand | ONSEMI |
Part Number | FDS6612A |
Quantity | Each (Supplied on Cut Tape) |
Technical Data Sheet EN |
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Bulk Discount
Quantity | Price |
2 | ₹ 118.37 |
3-5 | ₹ 117.17 |
5-10 | ₹ 114.75 |
10+ | ₹ 112.33 |
Bulk discount will be automatically applied during checkout based on quantity.