| ₹ 64.58 includes GST and import duties. | |
| B2B customers can avail ₹ 9.85 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The FDG6303N is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <1.5V)
- Gate-source Zener for ESD ruggedness
- Compact industry standard surface-mount-package
- -0.5 to 8V Gate to source voltage
- 0.5A Continuous drain/output current
- 1.5A Pulsed drain/output current
Industrial, Power Management
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.Other details
| Brand | ONSEMI |
| Part Number | FDG6303N |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
| Product Change Notice EN | |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 63.29 |
| 3-5 | ₹ 62.64 |
| 5-10 | ₹ 61.35 |
| 10+ | ₹ 60.06 |
Bulk discount will be automatically applied during checkout based on quantity.