| ₹ 89.87 includes GST and import duties. | |
| B2B customers can avail ₹ 13.71 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The FDC6312P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance.
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
- ±8V Gate to source voltage
- -2.3A Continuous drain/output current
- 7A Pulsed drain/output current
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type: P Channel |
| Drain Source Voltage Vds N Channel: - |
| Drain Source Voltage Vds P Channel: 20V |
| Continuous Drain Current Id N Channel: - |
| Continuous Drain Current Id P Channel: 2.3A |
| Drain Source On State Resistance N Channel: - |
| Drain Source On State Resistance P Channel: 0.115ohm |
| Transistor Case Style: SuperSOT |
| No. of Pins: 6Pins |
| Power Dissipation N Channel: - |
| Power Dissipation P Channel: 960mW |
| Operating Temperature Max: 150°C |
| Product Range: - |
| Qualification: - |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | ONSEMI |
| Part Number | FDC6312P |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 88.07 |
| 3-5 | ₹ 87.17 |
| 5-10 | ₹ 85.38 |
| 10+ | ₹ 83.58 |
Bulk discount will be automatically applied during checkout based on quantity.