MT53E256M32D2DS-046 AUT:B is a 4Gb mobile low-power DDR4 SDRAM with low VDDQ. It is a high-speed CMOS, dynamic random-access memory. This memory is internally configured with x16 I/O, 8-banks. Each of the x16's 536,870,912-bit banks are organized as 32,768 rows by 1024 columns by 16 bits. It has directed per-bank refresh for concurrent bank operation and ease of command scheduling. This memory has on-chip temperature sensor to control self refresh rate. It has clock-stop capability.
- Operating voltage range is 1.10V (VDD2)/0.60V or 1.10V (VDDQ)
- 256Meg x 32 configuration, LPDDR4, 2die addressing
- Packaging style is 200-ball WFBGA 10 x 14.5 x 0.8mm (�0.35 SMD)
- Cycle time is 468ps, �CK RL = 36/40
- Operating temperature range is -40°C to +125°C, B design, automotive qualified
- Clock rate is 2133MHz, data rate per pin is 4266Mb/s
- Ultra-low-voltage core and I/O power supplies
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)
Other details
| Brand |
MICRON |
| Part Number |
MT53E256M32D2DS-046 AUTB |
| Quantity |
Each |
| Technical Data Sheet EN |
 |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
