CY15B108QSN-108BKXI is an EXCELON� non-volatile ultra high-performance ferroelectric RAM (F-RAM). A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash and other non-volatile memories. Unlike serial flash, the performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories. This is capable of supporting 1014 read/write cycles or 100 million times more write cycles than EEPROM.
- Voltage range from 1.8V to 3.6V (3.0V typical), 8Mbit density
- Quad SPI F-RAM interface, no inrush current control
- 108MHz frequency, 24-ball FBGA package type
- Industrial temperature range from -40°C to +85°C
- 8Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K x 8
- Virtually unlimited endurance of 100 trillion (10^14) read/write cycles
- Infineon instant non-volatile write technology, advanced high-reliability ferroelectric process
- Single and multi I/O serial peripheral interface (SPI), serial bus interface SPI protocols
- Extended I/O SPI protocols, dual SPI (DPI) protocols, quad SPI (QPI) protocols
- Write protection, data security, and data integrity, user programmable serial number
Other details
| Brand |
INFINEON |
| Part Number |
CY15B108QSN-108BKXI |
| Quantity |
Each |
| Technical Data Sheet EN |
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