INFINEON BFP842ESDH6327XTSA1 Bipolar - RF Transistor, NPN, 3.25 V, 57 GHz, 120 mW, 40 mA, 150 hFE

The BFP 842ESD H6327 is a high performance Hetero-junction Bipolar Transistor specifically designed for 2.3 to 3.5GHz LNA applications. The device is based upon the reliable high volume silicon germanium carbon technology of Infineon. It provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5GHz. The simultaneous noise and power match without loss external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application. Integrated protection elements at in and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable battery-powered applications in which energy efficiency is a key requirement.